? semiconductor components industries, llc, 2016 june, 2016 ? rev. 4 1 publication order number: ntjs3151/d ntjs3151p, NVJS3151P trench power mosfet 12 v, 3.3 a, single p?channel, esd protected sc?88 features ? leading trench technology for low r ds(on) extending battery life ? sc?88 small outline (2x2 mm, sc70?6 equivalent) ? gate diodes for esd protection ? nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? high side load switch ? cell phones, computing, digital cameras, mp3s and pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source v oltage v dss ?12 v gate?to?source v oltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ?2.7 a t a = 85 c ?2.0 t 5 s t a = 25 c ?3.3 power dissipation (note 1) steady state t a = 25 c p d 0.625 w pulsed drain current t p = 10 s i dm ?8.0 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?0.8 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) parameter symbol max units junction?to?ambient ? steady state r ja 200 c/w junction?to?ambient ? t 5 s r ja 141 junction?to?lead ? steady state r jl 102 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). sc?88/sot?363 case 419b style 28 marking diagram & pin assignment www. onsemi.com see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information xxx m 1 6 1 xxx = device code m = date code = pb?free package dds ddg (note: microdot may be in either location) v (br)dss r ds(on) typ i d max ?12 v 45 m @ ?4.5 v 67 m @ ?2.5 v 133 m @ ?1.8 v ?3.3 a top view sc?88 (sot?363) d d s d d 6 5 4 1 2 3 g s d g 3 k
ntjs3151p, NVJS3151P www. onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?12 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 10 mv/ c zero gate voltage drain current i dss v gs = ?9.6 v, v ds = 0 v t j = 25 c ?1.0 a t j = 125 c ?2.5 gate?to?source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.5 a v ds = 0 v, v gs = 12 v 10 ma on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 100 a ?0.40 ?1.2 v negative threshold temperature coefficient v gs(th) /t j 3.4 mv/ c drain?to?source on resistance r ds(on) v gs = ?4.5 v, i d = ?3.3 a 45 60 m v gs = ?2.5 v, i d = ?2.9 a 67 90 v gs = ?1.8 v, i d = ?1.0 a 133 160 forward transconductance g fs v gs = ?10 v, i d = ?3.3 a 15 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?12 v 850 pf output capacitance c oss 170 reverse transfer capacitance c rss 110 total gate charge q g(tot) v gs = ?4.5 v, v ds = ?5.0 v, i d = ?3.3 a 8.6 nc gate?to?source charge q gs 1.3 gate?to?drain charge q gd 2.2 gate resistance r g 3000 switching characteristics (note 3) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?6.0 v, i d = ?1.0 a, r g = 6.0 0.86 s rise time t r 1.5 turn?off delay time t d(off) 3.5 fall time t f 3.9 drain?source diode characteristics (note 2) forward diode voltage v sd v gs = 0 v, i s = ?3.3 a t j = 25 c ?0.85 ?1.2 v t j = 125 c ?0.7 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntjs3151p, NVJS3151P www. onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) ?2 v 125 c 0 8 6 3 2 ?v ds , drain?to?source voltage (volts) ?i d, drain current (amps) 2 0 1 figure 1. on?region characteristics 0 8 1.5 12 0.5 0 4. 5 figure 2. transfer characteristics ?v gs , gate?t o?source voltage (volts) 8 1000 100 figure 3. on?resistance vs. drain current and temperature ?v ds , drain?to?source voltage (volts) ?i dss, leakage current (na) ?i d, drain current (amps) 0.5 3.5 0 figure 4. on?resistance vs. drain current and gate voltage ?i d, drain current (amps) ?50 0 ?25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 100000 2 t j = ?55 c v gs = 0 v 0.1 75 150 t j = 25 c i d = ?3.3 a v gs = ?4.5 v r ds(on), drain?to?source resistance (normalized) 25 c r ds(on), drain?to?source resistance ( ) 2.0 v gs = ?4.5 v ?1.2 v 01 2 ?1.4 v ?1.6 v ?2.4 v 0.075 0.05 45 10000 1.5 2.5 7.5 0.025 v gs = ?4.5 v figure 6. drain?to?source leakage current vs. voltage 0.2 ?i d, drain current (amps) 0.5 0 r ds(on), drain?to?source resistance ( ) v gs = ?4.5 v 0.1 0.4 v gs = ?2.5 v 0.3 4 10 t j = 125 c t j = ?55 c 0.2 t j = 25 c v gs = ?1.8 v 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 2 4 6 v ds ?12 v v gs = ?3.4 v 4 3.5 6.5 4.5 5.5 0.5 3.5 1.5 2.5 7. 5 6.5 4.5 5.5 46
ntjs3151p, NVJS3151P www. onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs = 0 v 4 08 1600 600 400 200 0 12 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) ?v gs, gate?to?source vol tage (volts ) t j = 25 c c oss c iss c rss i d = ?3.3 a t j = 25 c 1000 6 4 2 3 q2 q1 10 1 1000 100 100 r g , gate resistance (ohms) t, time (ns) v dd = ?6.0 v i d = ?1.0 a v gs = ?4.5 v 2 800 4.5 t d(off) t d(on) t f t r 10 2 0.6 0 ?v sd , source?to?drain voltage (volts) ?i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 3 figure 7. capacitance variation figure 8. gate?to?source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 6 1400 81 0 qt 10000 0.2 0.5 0.3 1 2 4 0.4 1200 3.5 2.5 1.5 0.5 0.8 0.9 ordering information device marking package shipping ? ntjs3151pt1g tj sc?88 (pb?free) 3000 / tape & reel ntjs3151pt2g tj NVJS3151Pt1g* vtj ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
ntjs3151p, NVJS3151P www. onsemi.com 5 package dimensions sc?88/sc70?6/sot?363 case 419b?02 issue y style 28: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protru- sions, or gate burrs shall not exceed 0.20 per end. 4. dimensions d and e1 at the outermost extremes of the plastic body and datum h. 5. datums a and b are determined at datum h. 6. dimensions b and c apply to the flat section of the lead between 0.08 and 0.15 from the tip. 7. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.08 total in excess of dimension b at maximum material condi- tion. the dambar cannot be located on the lower radius of the foot. c ddd m 123 a1 a c 654 e b 6x dim min nom max millimeters a ??? ??? 1.10 a1 0.00 ??? 0.10 ddd b 0.15 0.20 0.25 c 0.08 0.15 0.22 d 1.80 2.00 2.20 ??? ??? 0.043 0.000 ??? 0.004 0.006 0.008 0.010 0.003 0.006 0.009 0.070 0.078 0.086 min nom max inches 0.10 0.004 e1 1.15 1.25 1.35 e 0.65 bsc l 0.26 0.36 0.46 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.010 0.014 0.018 0.078 0.082 0.086 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.66 6x dimensions: millimeters 0.30 pitch 2.50 6x recommended top view side view end view bbb h b seating plane detail a e a2 0.70 0.90 1.00 0.027 0.035 0.039 l2 0.15 bsc 0.006 bsc aaa 0.15 0.006 bbb 0.30 0.012 ccc 0.10 0.004 a-b d aaa c 2x 3 tips d e1 d e a 2x aaa h d 2x d l plane detail a h gage l2 c ccc c a2 6x on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntjs3151p/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
|
